الفهرس 
Chapter1: IntroductionOnly 14 pages are availabe for public view
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Abstract
Indium Phosphide (InP) quantum dots are synthesized by the hot
injection preparation technique. They are characterized by using; XRD,
HRTEM, FTIR, UV-Vis, PL, Time resolved spectroscopy and EQE.
Zincblende crystal structure is recognized from XRD and confirmed by
SAED. These quantum dots have particle size varying from 4 to 6 nm so the
band gap has changed due to the change in the particle size. The band gap of
the quantum dots can be measured by UV-Vis and PL. This band gap made
these quantum dots compatible for solar cells. These quantum dots showed an
external quantum efficiency of 3.34% which indicated high sensitivity of the
produced InP to the incident photons.
Solar cell devices are built up by using InP QDs onto TiO2 films and
measure the photovoltaic performance. These cells showed good performance
and efficiency.