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Abstract Emerging non-volatile universal memory technology is vital for providing the huge storage capabilities required by the nano - computing facilities. The recently found memris - tor, 3the missing fourth circuit element3, is a potential candidate for the next - generation memory and has received extra attention in the last few years. In this work, a literature review of different physical realizations of the memristor is discussed. Following that, a comparison between two of the most promising physical realizations is conducted. Also, different memristor - based applications are reviewed showing that the memory application is the most promising one. Besides, memristor - based memory Read / Write circuit design considerations are demonstrated. Current literatures show destructive reading issue when using the memristor as a memory element |